Technological microwave plasma module for reactive-ion etching of electronic devices in dual-frequency discharge

A design of dual-frequency plasma discharge device developed for the purposes of reactive-ion etching of materials during formation of elements of a microstructure of products of electronic technology is presented. A basis of the design forms a microwave plasmatron of a cavity type with an applicator in the form of a slotted waveguide antenna locked up in a ring. Along the axis of the microwave applicator an evacuated quartz chamber is located. Both ends of it are closed by flat electrodes of low-frequency gas-discharge gas system of a capacity type. Dual-frequency discharge is initiated in the evacuated chamber under joint action of microwave (f1 ap 2.45 GHz) and low frequency (f2 ap 1...50 kHz) of electromagnetic fields.