Title :
Negative temperature coefficient of breakdown voltage in the Au-Ti-n-n+ 6h SiC Schottky-barrier diodes
Author :
Belyaev, A.E. ; Boltovets, N.S. ; Konakova, R.V. ; Krivutsa, V.A. ; Kudryk, Ya.Ya. ; Lebedev, A.A. ; Milenin, V.V.
Author_Institution :
V. Lashkaryov Inst. of Semicond. Phys., NAS of Ukraine, Kiev, Ukraine
Abstract :
Temperature coefficient of breakdown voltage (TCBV) in the Au-Ti-n-n+-6H SiC diodes with Schottky barrier is investigated. It is shown that TCBV is negative in the (300...573) K temperature range. This seems to be caused by the effect of deep levels in the space-charge region of a diode on the breakdown.
Keywords :
Schottky barriers; Schottky diodes; electric breakdown; silicon compounds; Au-Ti; SiC; SiC Schottky-barrier diode; breakdown voltage; negative temperature coefficient; space-charge region; temperature range; Etching; Gold; Helium; Metallization; Silicon carbide; Spectroscopy; Temperature;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
