Title :
Influence of semiconductor surface potential on the efficiency of conducting capacity in Me/n-GaAs contacts with Shottky barrier
Author :
Torkhov, N.A. ; Bozhkov, V.G.
Author_Institution :
Sci.-Res. Inst. of Semicond., Tomsk, Russia
Abstract :
The three assessment criterions of influence of an irregularity of a potential of a semiconductor surface on the efficiency of metal-semiconductor contacts with Shottky barrier were defined during the investigation. The principles of definition and methods of evaluation of efficiency of path of current flow in the metal-semiconductor contacts with Shottky barrier were developed.
Keywords :
III-V semiconductors; Schottky barriers; gallium arsenide; semiconductor-metal boundaries; GaAs; Shottky barrier; conducting capacity; current flow; metal-semiconductor contacts; semiconductor surface potential; Artificial intelligence; Helium; IEEE catalog; Organizing; Probes;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
