Title :
Modelling and design of a wideband 6–18 GHz GaN resistive mixer
Author :
Di Giacomo, Valeria ; Thouvenin, Nicolas ; Gaquière, Christophe ; Santarelli, Alberto ; Filicori, Fabio
Author_Institution :
Dept. of Electron., Univ. of Bologna, Bologna, Italy
fDate :
Sept. 29 2009-Oct. 1 2009
Abstract :
A wideband hybrid AlGaN/GaN resistive mixer has been designed and simulated. The cold-FET mixer is based on a 2*100*0.25 μm2 AlGaN/GaN HEMT in a single-ended circuit topology. An application-specific empirical transistor model has been extracted and validated in small- and large-signal conditions, in order to carry out the mixer design and simulations. This mixer presents an IF bandwidth of 6 GHz with a conversion loss <; 16 dB for each RF and LO frequency choice from 6 up to 18 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave mixers; AlGaN-GaN; AlGaN/GaN HEMT; cold-FET mixer; resistive mixer; single-ended circuit topology; Aluminum gallium nitride; Bandwidth; Circuit simulation; Circuit topology; Frequency conversion; Gallium nitride; HEMTs; Mixers; Radio frequency; Wideband;
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0
