Title :
Electrochemical processes and characterisation of doped Tio2 thin films; Relationship between preparation conditions and nanostructure
Author :
Manea, E. ; Staicu, L. ; Popescu, A. ; Obreja, A.C. ; Dinescu, A. ; Schiopu, V. ; Purica, M.
Author_Institution :
IMT, Bucharest, Romania
Abstract :
In this paper, we report an experimental study on electrochemical anodization using different acidic electrolytes of high purity Ti thin film deposited on silicon substrate by sputtering. The dependence of pore morphology and pore formation rate on process parameters was evaluated. In order to investigate the crystallization, after anodization, samples were annealed in a quartz tube furnace at different temperatures using nitrogen gas for annealing. The influence of electrolyte composition and annealing temperature on the nanostructure and morphology of the oxide layer and the changes induced by the heat treatment, were also investigated by SEM, FTIR and Raman spectroscopy. TiO2 film was doped with phosphorus and palladium to improve electrical conduction.
Keywords :
Fourier transform spectra; Raman spectra; annealing; anodisation; crystallisation; electrical conductivity; infrared spectra; nanofabrication; nanoporous materials; palladium; phosphorus; porous semiconductors; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; sputter deposition; titanium compounds; FTIR spectroscopy; Raman spectroscopy; SEM; Si; TiO2:P; TiO2:Pd; acidic electrolytes; annealing; crystallization; doped nanostructure thin films; electrical conduction; electrochemical anodization; electrochemical process; electrolyte composition; heat treatment; nitrogen gas; pore formation rate; pore morphology dependence; quartz tube furnace; silicon substrate; sputtering deposition; Annealing; Crystallization; Electrochemical processes; Furnaces; Morphology; Semiconductor thin films; Silicon; Sputtering; Substrates; Temperature; Ti thin films; anodization; nanoporous doped oxide; nanostructured thin films;
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-4413-7
DOI :
10.1109/SMICND.2009.5336581