SOI - a platform for transition from micro to nano

Author

Balestra, Francis

Author_Institution

Sinano Inst., UJF, Grenoble, France

Volume

1

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

3

Lastpage

12

Abstract

Silicon on insulator (SOI)-based devices are the best candidates for the ultimate integration of ICs on silicon. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si and alternative channel material MOSFETs. The impact of tensile or compressive uniaxial and biaxial strains in the channel down to ultra thin film and ultra short gate length, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. The interest of SOI-based emerging- and beyond-CMOS nanodevices for long term applications, based on nanowires and small slope switch structures is presented.

Keywords

CMOS integrated circuits; MOSFET; nanoelectronics; silicon-on-insulator; MOSFET; SOI-based device; Schottky source-drain architecture; beyond-CMOS nanodevice; nanowire; silicon on insulator; High K dielectric materials; High-K gate dielectrics; Inorganic materials; MOSFETs; Semiconductor thin films; Silicon on insulator technology; Switches; Tensile strain; Transistors; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2009. CAS 2009. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-4413-7

Type

conf

DOI

10.1109/SMICND.2009.5336622

Filename

5336622