Title :
Center balanced distributed ESD protection for 1–110 GHz distributed amplifier in 45 nm CMOS technology
Author :
Thijs, S. ; Linten, D. ; Pavageau, C. ; Scholz, M. ; Groeseneken, G.
fDate :
Aug. 30 2009-Sept. 4 2009
Abstract :
A center balanced distributed ESD (CB-DESD) protection methodology is presented. The ESD performance is boosted with at least 50% compared to conventional distributed ESD protection. This concept provides 2 kV HBM and 11.5 A VFTLP protection on a 1-110 GHz distributed amplifier (DA) implemented in 45 nm CMOS technology.
Keywords :
CMOS integrated circuits; distributed amplifiers; electrostatic discharge; microwave amplifiers; millimetre wave amplifiers; CMOS technology; VFTLP protection; center balanced distributed ESD protection; current 11.5 A; distributed amplifier; frequency 1 GHz to 110 GHz; human body model; size 45 nm; voltage 2 kV; CMOS technology; Distributed amplifiers; Distributed parameter circuits; Electrostatic discharge; Parasitic capacitance; Power system protection; Power transmission lines; Radio frequency; Topology; Wideband;
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
