DocumentCode
505705
Title
Transient photoconductivity in InGaN/GaN multiple quantum wells, measured by time-resolved terahertz spectroscopy
Author
Porte, H.P. ; Turchinovich, D. ; Cooke, D.G. ; Jepsen, P. Uhd
Author_Institution
DTU Fotonik - Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby, Denmark
fYear
2009
fDate
4-8 Oct. 2009
Firstpage
628
Lastpage
629
Abstract
Terahertz conductivity of InGaN/GaN MQWs was studied by time-resolved terahertz spectroscopy. Restoration of the built-in piezoelectric field leads to a nonexponential carrier density decay. Terahertz conductivity spectrum is described by the Drude-Smith model.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photoconductivity; quantum well lasers; semiconductor quantum wells; time resolved spectroscopy; wide band gap semiconductors; Drude-Smith model; InGaN-GaN; multiple quantum wells; nonexponential carrier density decay; time-resolved terahertz spectroscopy; transient photoconductivity; Charge carrier density; Conductivity; Gallium nitride; Photoconductivity; Probes; Quantum well devices; Radiative recombination; Spectroscopy; Spontaneous emission; Submillimeter wave measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location
Belek-Antalya
ISSN
1092-8081
Print_ISBN
978-1-4244-3680-4
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2009.5343412
Filename
5343412
Link To Document