High-speed characteristics of VCSELs and RCE-PDs based on intracavity contacted structure

Author

Song, Young Min ; Bong Kyu Jeong ; Byung Hoon Na ; Chang, Ki Soo ; Lee, Yong Tak

Author_Institution

Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

fYear

2008

fDate

Oct. 30 2008-Nov. 2 2008

Firstpage

1

Lastpage

3

Abstract

VCSELs and RCE-PDs based on intracavity contacted structure are demonstrated for high-speed operation. The maximum 3 dB bandwidth of VCSELs and RCE-PDs are 13.1 GHz and 9 GHz, respectively, making these devices suitable for 10 Gbps bi-directional optical interconnects.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; laser cavity resonators; optical interconnections; photodiodes; surface emitting lasers; InGaAs-GaAs; RCE-PD; VCSEL; bi-directional optical interconnects; bit rate 10 Gbit/s; high-speed characteristics; intracavity contacted structure; monolithic integration; resonant cavity-enhanced photodetectors; vertical-cavity surface-emitting lasers; Apertures; Distributed Bragg reflectors; Etching; Fabrication; Gallium arsenide; High speed optical techniques; Optical interconnections; Optical interferometry; Photodetectors; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia

Conference_Location

Shanghai

Print_ISBN

978-1-55752-863-6

Electronic_ISBN

978-1-55752-863-6

Type

conf

Filename

5348759