Title :
Enhancement and stabilization of photoluminescence of porous silicon by LaF3 passivation
Author :
Mou, Sinthia Shabnam ; Rahman, Md.Abdur ; Ismail, Abu Bakar Md.
Author_Institution :
School of Engineering and Computer Science, Independent University, Dhaka 1212, Bangladesh
Abstract :
E-beam evaporated LaF3 passivation of porous silicon (PS) has been investigated in this report. Heat treatment of the LaF{in3-passivated PS structure improves the PL characteristics. Passivation with thinner layer of LaF{in3 leaded to a good enhancement of photoluminescence intensity while thicker layer showed stabilization of photoluminescence.
Keywords :
Electronic mail; Etching; Heat treatment; Optical films; Optical refraction; Passivation; Photoluminescence; Physics; Protection; Silicon;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
