Title :
Low-temperature Si/Si wafer bonding using boride treated surface
Author :
Song, Hailan ; Huang, Hui ; Ren, Xiaomin ; Wang, Wenjuan ; Huang, Yongqing
Author_Institution :
Key Laboratory of Information Photonics & Optical Communication Ministry of Education, Beijing University of Posts and Telecommunications, 100876, China
Abstract :
An approach for Si/Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the Si fracture energy by annealing at 180°C. The properties of the bonded structures were studied in terms of the interface shape, electrical and optical characteristic through SEM, and interface I-V curve.
Keywords :
Annealing; Integrated optics; Optical materials; Optical mixing; Plasma temperature; Scanning electron microscopy; Semiconductor materials; Shape; Surface treatment; Wafer bonding;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
