Light extraction enhancement by the fabrication of sub-micron structures on GaN-based LEDs

Author

Lee, Yeeu-Chang ; Ciou, Ming-Jheng ; Ni, Cing-Huai ; Huang, Jean-Shen ; Tu, Sheng-Han ; Chang, Jenq-Yang ; Huang, Yu-Chieh ; Wu, Kuo-Chen ; Chung, Shih-Wen ; Wang, Wei-Kai ; Lee, Chi-Shen

Author_Institution

Dept. of Mech. Eng., Chung Yuan Christian Univ., Jhongli, Taiwan

fYear

2009

fDate

26-30 July 2009

Firstpage

102

Lastpage

104

Abstract

A cost effective and high throughput imprinting technique is integrated to conventional light emitting diodes (LEDs) chip process to enhance the light extraction efficiency. Sub-micron surface texture composed of spin on glass (SOG) is directly imprinting onto the top of transparent conductive layer (TCL). The electrical performances of LED chips are not damaged after applying the sub-micron structure. Compared to LED chips without SOG cover layer, the light extraction efficiency enhancements are 27.6% and 4.8% for LED chips with two dimensional (2D) hole-array and a planar SOG.

Keywords

III-V semiconductors; gallium compounds; light emitting diodes; microfabrication; surface texture; wide band gap semiconductors; 2D hole-array; GaN; GaN-based LED; high throughput imprinting technique; light emitting diodes; light extraction efficiency; light extraction enhancement; planar SOG; spin on glass; submicron structures; submicron surface texture; transparent conductive layer; Etching; Gallium nitride; Indium tin oxide; Light emitting diodes; Lithography; Optical buffering; Optical device fabrication; Optical surface waves; Surface texture; Temperature; LEDs; imprinting; light extraction efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on

Conference_Location

Genoa

ISSN

1944-9399

Print_ISBN

978-1-4244-4832-6

Electronic_ISBN

1944-9399

Type

conf

Filename

5394557