DocumentCode
511404
Title
Full adder design using hybrid CMOS-SET parallel architectures
Author
Deng, Guoqing ; Ren, Guoyan ; Chen, Chunhong
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
fYear
2009
fDate
26-30 July 2009
Firstpage
206
Lastpage
209
Abstract
Hybrid CMOS-SET architectures, which combine the merits of CMOS and SET (single-electron tunneling) devices, promise to be a practical implementation for nanometer-scale circuit design. In this work we propose two binary full adders using hybrid CMOS-SET parallel architectures, which take advantage of the Coulomb oscillation with SET devices in order to improve the circuit area, power consumption and temperature effect. We use the improved MIB compact models for SET devices and simulate hybrid CMOS-SET circuits in Cadence environment with all the circuit parameters specified. The results show that the designed circuits are able to work at room temperature with high current drivability and low power dissipation.
Keywords
CMOS logic circuits; adders; logic design; parallel architectures; single electron devices; Cadence; Coulomb oscillation; binary full adders; hybrid CMOS-SET parallel architectures; nanometer-scale circuit design; single-electron tunneling devices; Adders; CMOS technology; Circuits; Logic gates; MOSFETs; Parallel architectures; Power dissipation; Temperature; Tunneling; Voltage; Coulomb oscillation; Hybrid CMOS-SET; full adders; low power dissipation;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location
Genoa
ISSN
1944-9399
Print_ISBN
978-1-4244-4832-6
Electronic_ISBN
1944-9399
Type
conf
Filename
5394595
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