Conductance anomalies in quantum point contacts

Author

Frucci, G. ; Di Gaspare, L. ; Notargiacomo, A. ; Spirito, D. ; Evangelisti, F. ; Di Gaspare, A. ; Giovine, E.

Author_Institution

Phys. Dept., Univ. Roma TRE, Rome, Italy

fYear

2009

fDate

26-30 July 2009

Firstpage

190

Lastpage

193

Abstract

We present a study of the conductance of quantum point contacts fabricated in AlGaN/GaN and Si/SiGe heterostructures. The investigated devices differ for typology (split gates and etched devices, respectively) and for the resulting potential profiles. We observe conductance quantization in multiple of 2e²/h units with superimposed anomalous plateaus and/or structures suggesting that correlation effects should be included in the description of our 1D systems.

Keywords

Ge-Si alloys; III-V semiconductors; aluminium compounds; electric admittance; elemental semiconductors; gallium compounds; quantum point contacts; semiconductor heterojunctions; silicon; two-dimensional electron gas; wide band gap semiconductors; 1D systems; AlGaN-GaN; Si-SiGe; conductance anomalies; conductance quantization; etched devices; heterostructures; quantum point contacts; split gates; Aluminum gallium nitride; Electron mobility; Etching; Gallium nitride; Germanium silicon alloys; Quantization; Scanning electron microscopy; Silicon germanium; Temperature; Voltage; electronic transport; quantum point contact; valley splitting;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on

Conference_Location

Genoa

ISSN

1944-9399

Print_ISBN

978-1-4244-4832-6

Electronic_ISBN

1944-9399

Type

conf

Filename

5394599