Atomic layer etching of III–V compound materials using a low angle forward reflected Ne neutral beam

Atomic layer etching characteristics of III-V compound materials have been investigated using a Ne neutral beam and Cl₂ gas. At the monolayer etching condition, the roughness of the III-V compound materials surface was remaining similar to that of the un-etched III-V compound materials surface. In addition, the III-V compound materials etched by the atomic layer etching showed the surface composition similar to that before the etching while the III-V compound materials etched by a conventional reactive ion etching such as an inductively coupled plasma etching showed significant change in the surface composition.