• DocumentCode
    511472
  • Title

    Memory characteristics of IrOx metal nanocrystals embedded in high-κ Al2O3 films with IrOx metal gate

  • Author

    Maikap, S. ; Banerjee, W. ; Li, W.C. ; Yang, J.R.

  • Author_Institution
    Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
  • fYear
    2009
  • fDate
    26-30 July 2009
  • Firstpage
    378
  • Lastpage
    381
  • Abstract
    The memory characteristics of IrOx metal nanocrystals in an n-Si/SiO2/Al2O3/IrOx/Al2O3/IrOx structure with a small EOT of ˜6 nm have been investigated. The IrOx metal nanocrystals with a small size of ˜3 nm and high-density of ˜0.7??1013/cm2 have been observed. The enhanced memory characteristics with a large memory window of ΔV˜4V at a small gate voltage of ≪5V and good endurance of 104 cycles are achieved due to the charge storage in the IrOx nanocrystals.
  • Keywords
    aluminium compounds; flash memories; iridium compounds; nanoelectronics; nanostructured materials; random-access storage; silicon compounds; Si-SiO2-Al2O3-IrO-Al2O3-IrO; charge storage; flash memory; high-k films; memory characteristics; metal gate; metal nanocrystals; nanotechnology; nonvolatile memory; Al2O3; IrOx nanocrystals; flash memory; high-κ; metal gate; nanotechnology; nonvolatile memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
  • Conference_Location
    Genoa
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4244-4832-6
  • Electronic_ISBN
    1944-9399
  • Type

    conf

  • Filename
    5394664
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=511472