DocumentCode
511529
Title
InP quantum dot 7xxnm laser diodes
Author
Smowton, Peter M. ; Al-Ghamdi, Mohammed ; Edwards, Gareth ; Shutts, Samuel ; Krysa, Andrey B.
Author_Institution
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
fYear
2009
fDate
26-30 July 2009
Firstpage
508
Lastpage
509
Abstract
We describe the optimization of InP quantum dot material for laser applications, demonstrate some of the interesting physics that results from the nature of this material and describe initial results in promising application areas.
Keywords
III-V semiconductors; indium compounds; nanofabrication; nanophotonics; quantum dot lasers; semiconductor growth; semiconductor quantum dots; GaAs; InP; absorption spectra; growth optimisation; growth temperature; modal gain; nm laser applications; quantum dot laser diodes; room temperature threshold current density; spontaneous emission rate spectra; wafer design; Absorption; Density measurement; Diode lasers; Extraterrestrial measurements; Indium phosphide; Laser theory; Optical materials; Quantum dot lasers; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location
Genoa
ISSN
1944-9399
Print_ISBN
978-1-4244-4832-6
Electronic_ISBN
1944-9399
Type
conf
Filename
5394722
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