DocumentCode
511545
Title
The hybrid SET activity at INRIM
Author
Enrico, E. ; Amato, G.
Author_Institution
Electromagn. Div., Nat. Inst. of Metrol. Res., Turin, Italy
fYear
2009
fDate
26-30 July 2009
Firstpage
559
Lastpage
562
Abstract
The hybrid Single Electron Transistor is a promising device for the realization of an accurate standard for the electrical current. Recently, it has been demonstrated that SET in hybrid configuration SINIS or NISIN (S= Superconductor, N=Normal metal) can work as electron turnstile, with a very low uncertainties due to uncontrolled tunnelling events. At INRIM Single Electron Transistors (SET) are realized by means of two alternative approaches. The first consists in the shadow mask evaporation technique. The second is the Self aligning in-line technique. The two approaches employed at INRIM in realizing hybrid SETs will be described in detail, and critically discussed.
Keywords
single electron transistors; superconductor-insulator-superconductor devices; superconductor-normal-superconductor devices; INRIM; NISIN configuration; SINIS configuration; electron turnstile; hybrid SET activity; single electron transistor; uncontrolled tunnelling events; Electrodes; Frequency; Lithography; Metrology; Nanoscale devices; Resists; Single electron transistors; Sputtering; Tunneling; Uncertainty; Dolan technique; HSET; SAIL; e-beam lithography; metrology; tunnel junction;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location
Genoa
ISSN
1944-9399
Print_ISBN
978-1-4244-4832-6
Electronic_ISBN
1944-9399
Type
conf
Filename
5394738
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