• DocumentCode
    511545
  • Title

    The hybrid SET activity at INRIM

  • Author

    Enrico, E. ; Amato, G.

  • Author_Institution
    Electromagn. Div., Nat. Inst. of Metrol. Res., Turin, Italy
  • fYear
    2009
  • fDate
    26-30 July 2009
  • Firstpage
    559
  • Lastpage
    562
  • Abstract
    The hybrid Single Electron Transistor is a promising device for the realization of an accurate standard for the electrical current. Recently, it has been demonstrated that SET in hybrid configuration SINIS or NISIN (S= Superconductor, N=Normal metal) can work as electron turnstile, with a very low uncertainties due to uncontrolled tunnelling events. At INRIM Single Electron Transistors (SET) are realized by means of two alternative approaches. The first consists in the shadow mask evaporation technique. The second is the Self aligning in-line technique. The two approaches employed at INRIM in realizing hybrid SETs will be described in detail, and critically discussed.
  • Keywords
    single electron transistors; superconductor-insulator-superconductor devices; superconductor-normal-superconductor devices; INRIM; NISIN configuration; SINIS configuration; electron turnstile; hybrid SET activity; single electron transistor; uncontrolled tunnelling events; Electrodes; Frequency; Lithography; Metrology; Nanoscale devices; Resists; Single electron transistors; Sputtering; Tunneling; Uncertainty; Dolan technique; HSET; SAIL; e-beam lithography; metrology; tunnel junction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
  • Conference_Location
    Genoa
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4244-4832-6
  • Electronic_ISBN
    1944-9399
  • Type

    conf

  • Filename
    5394738