Analytical modeling of current in graphene nanoribbon field effect transistors

In this paper, double gate graphene nanoribbon (GNR) field effect transistor (FET) is presented. To get a better understanding of such transistors, an analytical modeling for channel current is achieved. To obtain such analytical modeling, an exponential equation for potential distribution within the GNR is presented through the use of a good approximation. Then an analytical formula for transmission probability is achieved which is a function of physical and electrical parameters. By applying Landauer formula along with ballistic transport, the drain current as a function of device parameters is revealed. The presented analytical investigation can be applied to design and optimize the GNR FETs for nanoelectronic applications.