DocumentCode :
511951
Title :
Calculation of exciton energy in InAs/InP self-assembled semiconductor quantum wires
Author :
Zihuan, Xu ; Yumin, Liu ; Zhongyuan, Yu ; Wenjie, Yao
Author_Institution :
Institute of Optical Communications and Optoelectronics, Beijing University of Posts and Telecommunications, China, 100876
Volume :
2009-Supplement
fYear :
2009
fDate :
2-6 Nov. 2009
Firstpage :
1
Lastpage :
7
Abstract :
Theoretical calculations of exciton in InAs/InP self-assembled quantum wires are presented in this paper. The Coulomb interaction between the electron and hole is calculated by using a fast Fourier transformation. In our simulations, strain effects are taken into consideration. Finally, we obtain the exciton binding energy in quantum wires by solving 1D Schrodinger equation along the quantum wire direction.
Keywords :
Capacitive sensors; Charge carrier processes; Electron optics; Excitons; Indium phosphide; Optical fiber communication; Photonics; Quantum mechanics; Semiconductor nanostructures; Wires; coulomb interaction; exciton; quantum wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
Type :
conf
Filename :
5405209
Link To Document :
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