DocumentCode
511972
Title
Doping profile effect on picosecond lasing of an internally Q-switched, high-power laser diode
Author
Lanz, Brigitte ; Vainshtein, Sergey ; Kostamovaara, Juha ; Lantratov, Vladimir ; Kalyuzhnyy, Nikolay
Author_Institution
Electronics Laboratory, Department of Electrical and Information Engineering, University of Oulu, P.O. Box 4500, 90014, Finland
Volume
2009-Supplement
fYear
2009
fDate
2-6 Nov. 2009
Firstpage
1
Lastpage
9
Abstract
The recently demonstrated high-power (50W from a 20µm stripe) picosecond (30ps) lasing from a laser diode has led us to address the internal Q-switching phenomenon, discovered four decades ago and not yet fully understood. We found that the realization of a nanosecond or picosecond mode in a diode depends on the doping profile across the structure.
Keywords
Diode lasers; Doping profiles; Laser modes; Laser radar; Optical pulses; Optical waveguides; P-n junctions; Semiconductor lasers; Solid lasers; Waveguide junctions; doping profile; internal Q-switching; picosecond pulse; semiconductor laser;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location
Shanghai, China
Print_ISBN
978-1-55752-877-3
Electronic_ISBN
978-1-55752-877-3
Type
conf
Filename
5405233
Link To Document