Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading

Author

Brocard, Sylvan ; Pala, Marco G. ; Esseni, David

Author_Institution

IMEP-LAHC, Grenoble INP, Grenoble, France

Volume

35

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

184

Lastpage

186

Abstract

We propose to employ a grading of the molar fraction in the source region of III-V hetero-junction tunnel-FETs as a means to improve the on-current without degrading the subthreshold swing. Our full quantum simulations show that the molar-fraction grading increases the on-current by enlarging the hole wave function penetration from the source to the channel region. We also compare the performance of graded AlGaSb/InAs tunnel FETs and InAs MOSFETs and show that at V_DS=0.3 V, the tunnel device can outperform the MOSFET in terms of both on-current and subthreshold slope.

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; indium compounds; semiconductor heterojunctions; tunnel transistors; AlGaSb-InAs; III-V FET; MOSFET; channel region; hetero-junction tunnel-FET; hole wave function penetration; large on-current enhancement; molar fraction grading; quantum simulation; source region; voltage 0.3 V; Doping; Indium phosphide; Junctions; MOSFET; Tunnel-FETs; hetero-junctions; molar fraction; quantum transport; tunnel-FET design;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2295884

Filename

6704728