Estimation of surface potential variation in short channel MOSFET by solving 2D Poisson´s equation

Author

Sengupta, S. ; Kundu, S.

Author_Institution

Dept. of Comput. Sci. & Eng. (Microelectron.), West Bengal Univ. of Technol., Kolkata, India

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

4

Abstract

Advances in technology leads to dramatic lowering of MOSFET channel length. However short channel effects (SCE) degrade device performance and put a limit to scaling down of device dimensions. Drain induced barrier lowering (DIBL) is such an effect where threshold voltage rolls off and sub-threshold current increases significantly. Study of the surface potential is important for understanding DIBL. In this paper we propose a numerical model to calculate the variation in surface potential by solving the 2-D Poisson´s equation, starting from a more accurate expression for the charge distribution. The results agree with the expected trend.

Keywords

MOSFET; Poisson equation; numerical analysis; semiconductor device models; surface potential; 2D Poisson equation; charge distribution; drain induced barrier lowering; numerical model; short channel MOSFET; subthreshold current; surface potential variation; threshold voltage; Computer science; Degradation; Doping; Electron mobility; Leakage current; MOSFET circuits; Microelectronics; Numerical models; Poisson equations; Threshold voltage; DIBL; Poisson´s equation; Surface potential; depletion region;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407084