Calculation of gain in GaAlAs/GaAs superlattice laser due to intersubband longitudinal optic (lo) phonon transitions

Author

Banerjee, A. ; Mukhopadhyay, S. ; Ghoshal, A.

Author_Institution

Inst. of Radio Phys. & Electron., Calcutta Univ., Kolkata, India

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

We have calculated the gain in GaAlAs/GaAs superlattice laser taking into account the intersubband transitions of electrons via longitudinal optic ( lo) phonons. The lo phonons are treated by the dispersive continuum model. Gain variation with the well-width is studied considering both superlattice and bulk phonon model. The electron mobility is calculated and its variation with well-width is also studied. Comparison of the results has been exhibited for both the superlattice and bulk phonons.

Keywords

III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; gallium compounds; laser beams; laser modes; laser transitions; semiconductor lasers; semiconductor superlattices; GaAlAs-GaAs; bulk phonon; dispersive continuum model; electron mobility; gain variation; intersubband longitudinal optic phonon transition; lo phonons; superlattice laser; Dispersion; Electron mobility; Electron optics; Gallium arsenide; Laser modes; Laser transitions; Optical refraction; Optical superlattices; Optical variables control; Phonons; Intersubband transitions; longitudinal optic (lo) phonons; superlattice laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407094