Mobile space charge effects on Terahertz properties of Wz-GaN based double drift IMPATT oscillators

The effect of mobile space charge on the high frequency properties and performance of DDR p⁺ p n n⁺ wurtzite GaN IMPATT diodes at terahertz frequency has been investigated. The studies are based on modeling and computer simulation method developed by the authors. The high frequency properties of DDR IMPATTs based on GaN at terahertz frequency regime are not available in the literature. It is observed from simulation studies that these devices are capable of delivering high RF power with a conversion efficiency of 12.3% at 0.30 terahertz at a bias current density of 2×10⁷ Am^-2. The design results presented in this paper will be useful for experimental work in realizing wurtzite GaN IMPATTs for operation at terahertz region.