Title :
A compact drift-diffusion current model of strained-Si-Si1-xGex MOSFETs
Author :
Chakraborty, Vedatrayee ; Mukhopadhyay, Bratati ; Basu, P.K.
Author_Institution :
Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
Abstract :
In this work, we calculated the drift-diffusion drain current of a strained Si n-channel MOSFET grown on a relaxed Si1-xGex layer using a compact model. The results are compared with the experimental data already reported. The current is also compared with that of unstrained Si n-MOSFET. The effect of strain and oxide thickness are also determined and reported here.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; semiconductor device models; silicon; Si-Si1-xGex; compact drift-diffusion current model; oxide thickness; relaxed layer; strain effect; strained n-channel MOSFET; Analytical models; Charge carrier processes; Degradation; Doping; Electron mobility; Germanium silicon alloys; MOSFET circuits; Quantum mechanics; Silicon germanium; Threshold voltage; Si-SiGe MOSFET; drift-diffusion transport; quantization; strained Si;
Conference_Titel :
Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4244-5073-2
