Monte - Carlo study of NDR effect in GaN at terahertz frequencies

Author

Ghosal, A. ; Sarkar, K.

Author_Institution

Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

We have theoretically studied the velocity-field characteristics in zinc-blende (zb) GaN by solving the Boltzmann transport equation with the help of one-particle Monte-Carlo method. The deformation potential acoustic phonon, polar optical phonon, alloy, impurity and inter-valley phonon scatterings have been included in our computations. At an electric field of approximately 50 kV/cm, the negative differential resistance (NDR) has been observed at temperature T = 300 K. We have found that the self-oscillating frequencies of zb GaN diodes are 2.62 THz, 1.97 THz and 1.57 THz corresponding to diode lengths 0.3Â¿ m, 0.4Â¿ m and 0.5Â¿ m respectively.

Keywords

Boltzmann equation; III-V semiconductors; Monte Carlo methods; gallium compounds; negative resistance; phonon-defect interactions; phonon-impurity interactions; wide band gap semiconductors; Boltzmann transport equation; GaN; deformation potential acoustic phonon; diode lengths; impurity; intervalley phonon scatterings; negative differential resistance; one-particle Monte Carlo method; polar optical phonon; self-oscillating frequencies; terahertz frequencies; velocity-field characteristics; zinc-blende gallium nitride; Acoustic scattering; Boltzmann equation; Diodes; Electric resistance; Frequency; Gallium nitride; Impurities; Optical computing; Optical scattering; Phonons;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407250