12.5 A/350 V AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis

Author

Shuang Liu ; Guohao Yu ; Kai Fu ; Shuxin Tan ; Zhili Zhang ; Chunhong Zeng ; Keyu Hou ; Wei Huang ; Yong Cai ; Baoshun Zhang ; Jinshe Yuan

Author_Institution

Key Lab. of Chongqing Municipal Educ. Comm., Chongqing Normal Univ., Chongqing, China

Volume

50

Issue

18

fYear

2014

fDate

August 28 2014

Firstpage

1322

Lastpage

1324

Abstract

An AlGaN/GaN metal-oxide semiconductor (MOS) high-electron mobility transistor (HEMT) on silicon substrate was obtained with 8 nm Al₂O₃ gate dielectric films grown using atomic layer deposition. The MOS-HEMT shows a low specific on-resistance of 0.57 Ω·mm², a large maximum saturate drain current of 12.5 A and a minimal threshold hysteresis of 0.05 V. Low specific on-resistance, large maximum saturate drain current and minimal threshold hysteresis show that the fabricated MOS-HEMT is very suitable for power switching applications.

Keywords

III-V semiconductors; alumina; atomic layer deposition; dielectric materials; elemental semiconductors; gallium compounds; high electron mobility transistors; silicon; wide band gap semiconductors; Al₂O₃; AlGaN-GaN-Si; MOS-HEMT; atomic layer deposition; current 12.5 A; gate dielectric films; high-electron mobility transistors; low specific on-resistance; maximum saturate drain current; metal-oxide semiconductor; minimal threshold hysteresis; power switching applications; silicon substrate; size 8 nm; voltage 0.05 V;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.2020

Filename

6888584