Title :
2-D Modeling of Electronic Noise in Semiconductor Devices
Author :
Houlet, P. ; Bonani, F. ; Ghione, G. ; Varani, L. ; Aboubacar, M. ; Vaissiere, J.C. ; Nougier, J.P. ; Starikov, E. ; Gruzhinskis, V. ; Shiktorov, P.
Author_Institution :
Dipartimento di Elettronica, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy; Centre d´´Electronique et de Microopto?lectronique de Montpellier, Universit? Montpellier II, 34095 Montpellier C?dex 5, France; Department of Electronic
Abstract :
We present two deterministic approaches for the calculation of electronic noise in semiconductor devices. Both approaches are based on the calculation of the impedance field. The former (transfer impedance) is applied to 1D Si p+pp+ diodes in the framework of drift-diffusion, hydrodynamic and scattered packet methods. The later (Langevin) is checked on the same diodes and applied to Si MESFETs in the framework of drift-diffusion method.
Keywords :
Density measurement; Hydrodynamics; Impedance measurement; Noise measurement; Power measurement; Scattering; Semiconductor device noise; Semiconductor devices; Semiconductor diodes; Voltage fluctuations;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
