Dark-Current Analaysis of InGaAs-MSM-Photodetectors on Silicon Substrates

Author

Wehmann, H.-H. ; Tang, G.P. ; Klockenbrink, R. ; Mo, S. ; Schlachetzki, A.

Author_Institution

Institute for Semiconductor Technology, Technical University Braunschweig, P.O. Box 3329, D-38023 Braunschweig, Germany, IHT@TU-BS.DE

fYear

1995

fDate

25-27 Sept. 1995

Firstpage

447

Lastpage

450

Abstract

The fabrication process of InGaAs metal-semiconductor-metal (MSM) photodetectors on lattice-mismatched (001)Si substrates is described. The Schottky-barrier is enhanced by a p⁺n-InP double layer. The dark-current densities measured are comparable to those of lattice-matched devices on InP. Their distribution shows the good reproducibility of the fabrication process. From the temperature and voltage dependence of the dark current we find that on Si the current in the medium voltage range is noticeably influenced by tunneling which we relate to defect centres in the bandgap. Nevertheless, the dark current is low enough for applications of the MSM-detectors in optoelectronic systems.

Keywords

Dark current; Density measurement; Fabrication; Indium gallium arsenide; Indium phosphide; Photodetectors; Reproducibility of results; Silicon; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European

Conference_Location

The Hague, The Netherlands

Print_ISBN

286332182X

Type

conf

Filename

5435930