DocumentCode
513684
Title
Array-Like Metal-Resistance-Semiconductor Photodetectors: Characterization and Modelling
Author
Zappa, F. ; Lacaita, Andrea ; Catuozzo, M. ; Gotra, Y ; Malakhov, N. ; Sadygov, Z.
Author_Institution
Politecnico di Milano, Dipartimento di Elettronica e Informazione, piazza L. da Vinci 32, 20133 Milano, Italy
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
895
Lastpage
898
Abstract
This paper reports the experimental characterisation of Metal-Resistance-Semiconductor devices. The effect of the confinement of the current around the seeding point is discussed and a complete device model is presented. The resistive layer improves the performance of the device and enables an array-like parallel detection of many photons. The advantages are: a reduced electronics complexity, no blind-zone, and uniform sensitivity.
Keywords
Detectors; Negative feedback; Optical arrays; Photodetectors; Semiconductor device noise; Semiconductor device testing; Sensor arrays; Signal to noise ratio; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5435935
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