Suppression of the Parasitic Bipolar Transistor in Deep Sub-Micron MOSFETs by the Use of a Narrow Band-Gap, SiGe Source

Author

Wu, Z.Y. ; Hall, S. ; Eccleston, W.

Author_Institution

Department of Electrical Engineering and Electronics, The University of Liverpool, Liverpool L69 3BX, U.K.

fYear

1995

fDate

25-27 Sept. 1995

Firstpage

509

Lastpage

512

Abstract

We demonstrate here the principle of the application of reverse heterojunction engineering for the suppression of the parasitic bipolar transistor in deep sub-micron MOSFETs. Simulation results using the TMA-MEDICI package, based on a deep sub-micron vertical MOSFET structure, demonstrated the efficacy of using a narrow band-gap SiGe source. The breakdown voltage induced by the parasitic bipolar can be increased by up to 60% with a SiGe source of only 10% Ge.

Keywords

Bipolar transistors; Breakdown voltage; Doping; Electronics packaging; Feedback; Germanium silicon alloys; Heterojunctions; MOSFETs; Photonic band gap; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European

Conference_Location

The Hague, The Netherlands

Print_ISBN

286332182X

Type

conf

Filename

5435942

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513689