Title :
Demonstration of Enhanced Base Diffusion Due to Extrinsic Base Implantations in Submicron, Polysilicon-Emitter, Epitaxial Base Bipolar Transistors
Author :
Denorme, S. ; Boussetta, H. ; Chantre, A. ; Vincent, G. ; Mouis, M.
Author_Institution :
France Telecom CNET-Grenoble, BP98, 38243 Meylan Cedex, France.
Keywords :
Bipolar transistors; Boron; Doping profiles; Etching; Frequency; Implants; Photonic band gap; Tail; Telecommunications; Temperature dependence;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
