• DocumentCode
    513690
  • Title

    Demonstration of Enhanced Base Diffusion Due to Extrinsic Base Implantations in Submicron, Polysilicon-Emitter, Epitaxial Base Bipolar Transistors

  • Author

    Denorme, S. ; Boussetta, H. ; Chantre, A. ; Vincent, G. ; Mouis, M.

  • Author_Institution
    France Telecom CNET-Grenoble, BP98, 38243 Meylan Cedex, France.
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    513
  • Lastpage
    516
  • Keywords
    Bipolar transistors; Boron; Doping profiles; Etching; Frequency; Implants; Photonic band gap; Tail; Telecommunications; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5435943
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513690