DocumentCode
513704
Title
A SOI 0.1 μm Epitaxial-Channel MOSFET
Author
Dudek, V. ; Appel, W. ; Beer, L. ; Hofflinger, B.
Author_Institution
Institute for Microelectronics Stuttgart, Allmandring 30 A, 70569 Stuttgart, Germany
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
221
Lastpage
224
Abstract
Silicon MOS transistors on oxide with 0.1 μm channel length have been produced by reduced-temperature, in-situ doped selective epitaxy. Together with a 6nm oxinitride gate dielectric, an intrinsic transconductance of up to 700 mS/mm was obtained at room temperature, equivalent to a maximum electron velocity of 1,3 × 107 cm/s. This novel SOI-MOSFET technology is free of equipment constraints like those for gate lithography and it offers freedom of process design towards robust ultra-high-speed silicon MOSFET´s.
Keywords
Dielectrics; Electrons; Epitaxial growth; Lithography; MOSFET circuits; Process design; Robustness; Silicon; Temperature; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5435963
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