• DocumentCode
    513706
  • Title

    Annealing of Stress-Induced Interface and Border Traps in MOS Devices: A Charge-Pumping Study

  • Author

    Autran, J.L. ; Flamen, O. ; Chabrerie, C. ; Musseau, O. ; Leray, J.L.

  • Author_Institution
    CEA, Centre d´´Etudes de Bruy?res, BP 12, F-91680 Bruy?res-Le-Ch?tel, France
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    851
  • Lastpage
    854
  • Abstract
    An accelerated test method, combining different charge pumping techniques with isochronal anneals, has been used to investigate the generation and evolution of interface and border traps after uniform degradation (Fowler Nordheim injection and X-ray irradiation), simultaneously with their energy position in the silicon bandgap and their characteristic time constants.
  • Keywords
    Annealing; CMOS technology; Charge pumps; Degradation; Electric variables measurement; Frequency; MOS devices; Performance evaluation; Standards development; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5435965
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513706