Title :
Annealing of Stress-Induced Interface and Border Traps in MOS Devices: A Charge-Pumping Study
Author :
Autran, J.L. ; Flamen, O. ; Chabrerie, C. ; Musseau, O. ; Leray, J.L.
Author_Institution :
CEA, Centre d´´Etudes de Bruy?res, BP 12, F-91680 Bruy?res-Le-Ch?tel, France
Abstract :
An accelerated test method, combining different charge pumping techniques with isochronal anneals, has been used to investigate the generation and evolution of interface and border traps after uniform degradation (Fowler Nordheim injection and X-ray irradiation), simultaneously with their energy position in the silicon bandgap and their characteristic time constants.
Keywords :
Annealing; CMOS technology; Charge pumps; Degradation; Electric variables measurement; Frequency; MOS devices; Performance evaluation; Standards development; Thickness measurement;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
