A B-splines Regression Technique to Determine One-Dimensional MOS Doping Profiles

The use of B-splines representation as a general non-parametric functional form in the inverse modeling determination of MOS doping profiles from deep depletion capacitance data is described. A self-adaptive algorithm for the spline knots placement is presented. Its use results in a fully automated extraction procedure. The profile of an N-channel MOSFET is shown together with results that illustrate the performance of the proposed algorithm. Finally, a comparison of simulated and experimental Ids, current values highlights the accuracy of the extracted profile.