On 1/F Noise in Polysilicon Emitter Bipolar Transistors: Coherence between Base Current Noise and Emitter Series Resistance Noise

Author

Markus, H.A.W. ; Roche, Ph. ; Kleinpenning, T.G.M.

Author_Institution

Eindhoven University of Technology, Department of Electrical Engineering, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

fYear

1996

fDate

9-11 Sept. 1996

Firstpage

787

Lastpage

790

Abstract

The 1/f noise in polysilicon emitter bipolar transistors is investigated The main 1/f noise source proved to be located in the oxide layer. This source causes both 1/f noise in the base current SIb and 1/f noise in the emitter series resistance Sre. The 1/f noise is ascribed to barrier height fluctuations of the oxide layer resulting in transparency fluctuations for both minority and majority carriers in the emitter, giving rise to SIb and Sre, respectively. This model predicts SIb and Sre to be correlated. Our experimental results show a correlation factor in the range of 0.3 to 0.5. The deviation from full correlation is ascribed to local inhomogeneities in the oxide layer.

Keywords

Acoustical engineering; Bipolar transistors; Charge carrier processes; Circuits; Density measurement; Electric resistance; Electrical resistance measurement; Noise generators; Strontium; Voltage fluctuations;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European

Conference_Location

Bologna, Italy

Print_ISBN

286332196X

Type

conf

Filename

5436004