Title :
Experimental Method to Extract A.C. Collector-Base Resistance from SiGe HBT´s
Author :
Hamel, J.S. ; Alison, R. ; Blaikie, R.
Author_Institution :
Department of Electronics and Computer Science, University of Southampton, Southampton, England,
Abstract :
A simple experimental technique is presented which enables the accurate extraction of the a.c. collector-base resistance that models the impact of neutral base recombination on the a.c. output resistance of bipolar transistors.
Keywords :
Bipolar transistors; Boron; Current measurement; Electric resistance; Electrical resistance measurement; Gain measurement; Germanium silicon alloys; Silicon germanium; Spontaneous emission; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
