DocumentCode
513778
Title
The New Tranzistor Type Nanostructure on the Base of the Controlled Electronic Interference Effects
Author
Petrov, V.A. ; Sandler, I.M.
Author_Institution
Institute of Radio Engineering & Electronics, Russian Academy of Sciences, Mokhovaya 11, Moscow, 103907, Russia, Fax:(095) 203-8414; E-mail:L193@IRE.RC.AC.RU
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
587
Lastpage
590
Abstract
We have theoretically investigated electronic interference effects in the ballistic conductivity of geometrically uniform 1D and 2D transistor type structures with nonuniform potential relief. It is shown that transmission coefficient |T|2 reaches zero value when the particle energy coincides with the energies of quasi-bound states created in the structure with the aid of the controlling electrode.
Keywords
Conductivity; Electrodes; Electrons; Interference; Nanoscale devices; Particle scattering; Quantum dots; Radio control; Region 1; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5436057
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