DocumentCode :
513782
Title :
A Salicided Flash EEPROM for Embedded Memory Applications
Author :
Marangon, S. ; Maurelli, A. ; Moroni, M. ; Baldi, L.
Author_Institution :
SGS-THOMSON Microelectronics, Via C.Olivetti 2, 20041 Agrate Brianza, Italy
fYear :
1996
fDate :
9-11 Sept. 1996
Firstpage :
697
Lastpage :
700
Abstract :
Salicide is currently used in sub-half-micron CMOS logic devices, but has not been used till now for Non Volatile Memories, because of reliability concerns. In this paper we report the realisation of a Flash memory cell in a 0.5¿m salicided CMOS process. Writing and erasing characteristics are full comparable with non-salicided technology, and preliminary reliability tests have not shown any major problem.
Keywords :
EPROM; Etching; Implants; Logic devices; Microelectronics; Microprocessors; Silicon; Testing; Titanium; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
Print_ISBN :
286332196X
Type :
conf
Filename :
5436061
Link To Document :
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