Title :
1/f Noise in Polycrystalline Silicon Thin Film Transistors
Author :
Corradetti, A. ; Leoni, R. ; Carluccio, R. ; Fortunato, G. ; Reita, C. ; Plais, F. ; Pribat, D.
Author_Institution :
IESS-CNR, Via Cineto Romano 42,00156 Roma, ITALY
Abstract :
A systematic study of the noise performances of polycrystalline silicon thin film transistors is presented. The drain current spectral density of these devices shows an evident 1/f behavior and scales, when operating in the linear regime, with the square of the mean value of the drain current. From the analysis of the results the origin of the noise can be ascribed to carrier number fluctuations related to the dynamic trapping and detrapping of the oxide traps.
Keywords :
Active matrix liquid crystal displays; Circuit noise; Fluctuations; Noise measurement; Noise reduction; Plasma measurements; Semiconductor device noise; Silicon; Thin film transistors; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
