DocumentCode
513809
Title
DC Modeling of Composite MOS Transistors
Author
de Haan, P.E. ; Klumperink, E.A.M. ; van Leeuwen, M.G. ; Wallinga, H.
Author_Institution
MESA Research Institute, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands. e-mail: p.e.dehaan@el.utwente.nl; phone: x-31-53-892754
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
801
Lastpage
804
Abstract
Mixed-signal circuit design on sea-of-gates arrays requires the use of composite MOSTs, combinations of in-series and in-parallel connected unit MOSTs. To avoid an increase in circuit simulation complexity these are in general replaced by artificial single MOSTs. The analysis in this paper shows that a straightforward replacement will lead to incorrect results. Series MOSTs (in-series connected unit MOSTs) are essentially different from single MOSTs due to the presence of diffusion areas interrupting the channel at regular distances. The influence of lateral diffusion, charge sharing, and series resistance needs to be reconsidered. The theoretical results are confirmed by measurements on an experimental IC. Parameter decks of existing MOST models for circuit level simulation can be modified easily to reflect the length dependences of composite MOST parameters.
Keywords
Circuit simulation; Circuit synthesis; Electrical resistance measurement; Geometry; Integrated circuit modeling; Intrusion detection; Joining processes; Length measurement; MOSFETs; Space charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5436137
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