• DocumentCode
    513809
  • Title

    DC Modeling of Composite MOS Transistors

  • Author

    de Haan, P.E. ; Klumperink, E.A.M. ; van Leeuwen, M.G. ; Wallinga, H.

  • Author_Institution
    MESA Research Institute, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands. e-mail: p.e.dehaan@el.utwente.nl; phone: x-31-53-892754
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    801
  • Lastpage
    804
  • Abstract
    Mixed-signal circuit design on sea-of-gates arrays requires the use of composite MOSTs, combinations of in-series and in-parallel connected unit MOSTs. To avoid an increase in circuit simulation complexity these are in general replaced by artificial single MOSTs. The analysis in this paper shows that a straightforward replacement will lead to incorrect results. Series MOSTs (in-series connected unit MOSTs) are essentially different from single MOSTs due to the presence of diffusion areas interrupting the channel at regular distances. The influence of lateral diffusion, charge sharing, and series resistance needs to be reconsidered. The theoretical results are confirmed by measurements on an experimental IC. Parameter decks of existing MOST models for circuit level simulation can be modified easily to reflect the length dependences of composite MOST parameters.
  • Keywords
    Circuit simulation; Circuit synthesis; Electrical resistance measurement; Geometry; Integrated circuit modeling; Intrusion detection; Joining processes; Length measurement; MOSFETs; Space charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5436137