• DocumentCode
    513844
  • Title

    Increased Current Gain and Reduced Emitter Resistance in Sige HBTs by Fluorine Or Chlorine Implantation into a Polysilicon Emitter Contact

  • Author

    Schiz, J. ; Moiseiwitsch, N.E. ; Marsh, C.D. ; Ashburn, P. ; Booker, G.R.

  • Author_Institution
    Department of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, UK.
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    461
  • Lastpage
    464
  • Abstract
    This paper shows that fluorine implantation can be used to reduce the emitter resistance in a polysilicon emitter contact using a thermal budget that is compatible with SiGe technology. The influence of fluorine and chlorine on the base current is also investigated and it is shown that suppression by a factor of ~7 can be obtained in some circumstances.
  • Keywords
    Annealing; Area measurement; Contact resistance; Electrical resistance measurement; Germanium silicon alloys; Implants; Silicon germanium; Surface resistance; Temperature; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436191
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513844