DocumentCode
513860
Title
Effect of Nitride Sidewall Spacer on Hot Carrier Reliability Characteristics of MOSFET´s
Author
Hwang, Hyunsang ; Lee, Dong-Hoon ; Hwang, Jeong Mo
Author_Institution
ULSI Laboratory, LG Semicon Co., #1, Hyangjeong, Hungduk, Cheongju 360-480, KOREA
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
69
Lastpage
72
Abstract
In this paper, we have compared the reliability characteristics of MOSFET with nitride sidewall and oxide sidewall spacer. We found that the unique reliability characteristics of nitride sidewall spacer device. At the initial stage of stress, large degradation of drain current occurs for nitride sidewall device at low stress drain bias due to the enhanced trapping of nitride spacer. However, nitride sidewall devices exhibit improvement of device lifetime which was defined as a 10% degradation of drain current.
Keywords
Degradation; Etching; Fabrication; Hot carriers; Impact ionization; Ion implantation; MOSFET circuits; Random access memory; Stress; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436217
Link To Document