DocumentCode :
513862
Title :
A New Charge Pumping Method for Studying the Si-SiO2 Interface
Author :
Maneglia, Y. ; Bauza, D. ; Ghibaudo, G.
Author_Institution :
Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, UMR/CNRS 5531, ENSERG/INPG, BP 257, 38016 Grenoble France.
fYear :
1996
fDate :
9-11 Sept. 1996
Firstpage :
73
Lastpage :
76
Abstract :
It is shown that, by varying the frequency of the gate signal in charge pumping measurements, the in-depth concentration profile of the traps from the slow to the fast interface traps, can be obtained. A simple model for the extraction of the trap density is derived. Depth trap concentration profiles are recorded from virgin and stressed devices. For the virgin device, the trap concentration in the oxide agree with that measured on state-of-the-art MOS transistors using noise measurements. On virgin and stressed devices, the integration of the depth trap concentration profiles leads to the interface trap densities measured using the conventional charge pumping method.
Keywords :
Charge measurement; Charge pumps; Current measurement; Density measurement; Electron traps; Frequency measurement; MOSFETs; Noise measurement; Spontaneous emission; Stress measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
Print_ISBN :
286332196X
Type :
conf
Filename :
5436219
Link To Document :
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