Influence of the Silicon Thickness on the Reverse Short Channel Effect in SOI MOSFETs

This paper presents experimental results on the variation of the threshold voltage roll-on with shrinking the channel length of Silicon-on-Insulator NMOSFETs, as a function of the silicon overlayer thickness. It is found that the Reverse-Short-Channel-Effect (RCSE) is reduced as the silicon thickness decreases. These results are first explained assuming silicon interstitial recombination at the buried oxide interface and then simulated using coupled process-device simulation that enables the estimation of values of the fundamental point defects properties.