DocumentCode
513872
Title
A Highly Efficient 1.9-GHz Si High Power MOSFET
Author
Yoshida, Isao ; Katsueda, Mineo ; Maruyama, Yasuo ; Kohjiro, Iwamichi
Author_Institution
Semiconductor & Integrated Circuits Div., Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
405
Lastpage
408
Abstract
A 1.9-GHz Si power MOSFET with 50% power-added efficiency and 0.3 - 1.0 W output power at a 3 - 5 V supply voltage has been developed for use as a high-power amplifier in cellular telephones. This MOSFET achieves high efficiency and high power at a low supply voltage by using a 0.5-¿m gate power MOSFET with an Al-shorted metal-silicide/Si gate structure, which improves the cut-off frequency and reduces the on-state resistance.
Keywords
Cellular phones; Cutoff frequency; Degradation; High power amplifiers; Low voltage; MOSFET circuits; Power MOSFET; Power amplifiers; Power generation; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436230
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