DocumentCode
513877
Title
Sensitivity and Noise of MOS Magnetic Field Effect Transistors
Author
Killat, D. ; Umbach, F. ; Kluge, J.v. ; Schmitz, R. ; Langheinrich, W.
Author_Institution
Solid State Electronics Laboratories, Technical University of Darmstadt, Schlossgartenstrasse 8, D-64289 Darmstadt, Germany
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
111
Lastpage
114
Abstract
The characteristics of magnetic field-sensitive split-drain MOSFETs (MAGFETs) are experimentally measured. The sensitivity depends on the geometry and the operating point of the MAGFET. Particular attention was taken on the lateral parasitic conductance between the split drains. The equivalent spectral noise density of the magnetic flux density was measured and discussed.
Keywords
Circuit noise; Electrical resistance measurement; FETs; MOSFETs; Magnetic field measurement; Magnetic noise; Magnetic sensors; Noise measurement; Semiconductor device noise; Sensor phenomena and characterization;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436235
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