• DocumentCode
    513884
  • Title

    Physical Models for 2D Numerical Simulation of New Titanium Salicide Processes

  • Author

    Fornara, P. ; Touret, O. ; Poncet, A.

  • Author_Institution
    France Telecom, CNET, BP 98, 38243 Meylan Cedex, France
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    145
  • Lastpage
    148
  • Abstract
    Contact silicidation over very shallow junctions and narrow Si-poly lines is one of the most critical issues for ultra large scale integration (ULSI) circuit applications. The aim of this paper is to present a physically based unified model for titanium silicide processes which is valid for both techniques silicide growth by solid state phase (SSP) reaction and silicide chemical vapor deposition (CVD) with control of substrate consumption. After the description of the model, 2D numerical simulation results are presented.
  • Keywords
    Chemical vapor deposition; Numerical models; Numerical simulation; Semiconductor device modeling; Silicidation; Silicides; Solid modeling; Solid state circuits; Titanium; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436244
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513884