• DocumentCode
    513897
  • Title

    Numerical Study of a Silicon Permeable Base Transistor with a Non-Uniform Doping Profile

  • Author

    Mouis, M.

  • Author_Institution
    France Telecom, CNET/CNS, Chemin du Vieux-Chêne, BP 98, F-38243 Meylan Cedex, France; Institut d´´Electronique Fondamentale, CNRS URA 22, F-91405 Orsay Cedex, France
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    31
  • Lastpage
    34
  • Abstract
    We present the results of the 2D numerical simulation of a silicon permeable base transistor. We correlate the slight degradations of the transconductance and transit frequency, as well as the large improvement of the power capability which were obtained with a non-uniform doping profile, to the physical mechanisms involved, and showed that a significant net improvement of the fTVB product can be gained by this means.
  • Keywords
    Breakdown voltage; Doping profiles; Epitaxial layers; Fingers; Frequency; Geometry; Periodic structures; Power generation; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5436259
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513897